BJT Devices =========== npn13G2 ------- **Device Information** .. list-table:: HBT NPN13G2 Bipolar Specifications :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - npn SiGe:C HBT high performance device, 350 GHz fT. Layout configuration CBE * - Device Recognition - Activ, nSD.blk, TRANS, EmWind, ptab (pSD + Activ.mask) * - Model Name - npn13G2 * - Layout Cell Name - sg13g2_pr - npn13G2 * - Parameters - we, le, AE, PE, Nx, m * - Netlist Syntax - `Q1 C B E sub! npn13G2 le=900.0n we=70.00n Nx=1 m=1` **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for npn13G2 Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - we - Emitter width (Fixed) - ❌ - ✅ - ❌ * - le - Emitter length (Fixed) - ❌ - ✅ - ❌ * - AE - Emitter area (Fixed), will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - PE - Emitter perimeter (Fixed), will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - Nx - x-Multiplier - ✅ - ✅ - ✅ * - m - Number of BJT devices (multiplicity) - ✅ - ✅ - ✅ .. tip:: - The npn13G2 device has fixed dimensions, (WE = 0.07u & LE = 0.9u). - You have the option to use either WE/LE or AE/PE in your netlist. **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/npn13G2_layout.png :width: 500 :align: center :alt: npn13G2 device - layout .. rst-class:: center Figure 4.3.1 Layout for NPN13G2 bipolar transistor npn13G2L -------- **Device Information** .. list-table:: HBT NPN13G2L Bipolar Transistor Specifications :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - npn SiGe:C scalable HBT high performance device, 280 GHz fT. Layout configuration BEC * - Device Recognition - Activ, TRANS, EmWind, ptab (pSD + Activ.mask) * - Model Name - npn13G2l * - Layout Cell Name - sg13g2_pr - npn13G2L * - Parameters - We, le, AE, PE, m/NE * - Netlist Syntax - `Q1 net1 net2 net3 sub! npn13G2l le=1.0u we=70.00n m=1` **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for npn13G2L Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - we - Emitter width (Fixed) - ❌ - ❌ - ❌ * - le - Emitter length - ❌ - ❌ - ❌ * - AE - Emitter area, will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - PE - Emitter perimeter, will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - m/NE - Number of BJTs/Emitters (multiplicity) - ❌ - ✅ - ✅ .. tip:: - The npn13G2L device has fixed width (WE = 0.07u), its length (LE) could vary from [1:2.5]u. - You have the option to use either WE/LE or AE/PE in your netlist. **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/npn13G2L_layout.png :width: 500 :align: center :alt: npn13G2L device - layout .. rst-class:: center Figure 4.3.2 Layout for NPN13G2L bipolar transistor npn13G2V -------- .. list-table:: HBT NPN13G2V Bipolar Transistor Specifications :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - npn SiGe:C scalable HBT high voltage device, 90 GHz fT. Layout configuration BEC * - Device Recognition - Activ, TRANS, EmWiHV, ptab (pSD + Activ.mask) * - Model Name - npn13G2v * - Layout Cell Name - sg13g2_pr - npn13G2V * - Parameters - We, le, AE, PE, m/NE * - Netlist Syntax - `Q1 net1 net2 net3 sub! npn13G2v le=1.0u we=120.00n m=1` **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for npn13G2V Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - we - Emitter width (Fixed) - ❌ - ❌ - ❌ * - le - Emitter length - ❌ - ❌ - ❌ * - AE - Emitter area, will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - PE - Emitter perimeter, will be calculated from WE/LE if not explicitly provided. - ❌ - ✅ - ✅ * - m/NE - Number of BJTs/Emitters (multiplicity) - ❌ - ✅ - ✅ .. tip:: - The npn13G2V device has fixed width (WE = 0.12u), its length (LE) could vary from [1:5.0]u. - You have the option to use either WE/LE or AE/PE in your netlist. **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/npn13G2V_layout.png :width: 500 :align: center :alt: npn13G2V device - layout .. rst-class:: center Figure 4.3.3 Layout for NPN13G2V bipolar transistor pnpMPA ------ **Device Information** .. list-table:: HBT PNP Bipolar Transistor Specifications :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - HBT pnp used for BandGap Reference (BGR) circuit * - Device Recognition - Activ, NWell, nBuLay, pSD * - Model Name - pnpMPA * - Layout Cell Name - sg13g2_pr - pnpMPA * - Parameters - l, w, a, p, m/NE * - Netlist Syntax - `Q1 sub! net1 net2 pnpMPA a=1.4p p=5.4u m=1` **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for pnpMPA Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - W - Emitter width - ✅ - ✅ - ❌ * - L - Emitter length - ✅ - ✅ - ❌ * - A - Emitter area, will be calculated from W/L if not explicitly provided. - ❌ - ✅ - ✅ * - P - Emitter perimeter, will be calculated from W/L if not explicitly provided. - ❌ - ✅ - ✅ * - m/NE - Number of BJTs/Emitters (multiplicity) - ❌ - ✅ - ✅ .. tip:: - You have the option to use either W/L or A/P in your netlist. - In KLayout netlist browser's display mode, the A/P parameters will be mapped to AE/PE. **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/pnpMPA_layout.png :width: 500 :align: center :alt: pnpMPA device - layout .. rst-class:: center Figure 4.3.4 Layout for pnpMPA bipolar transistor