ESD Devices =========== .. tip:: All ESD devices come in predetermined sizes, and the only parameter we keep track of is 'm', which is the number of ESD devices (multiplicity). diodevdd_2k ----------- **Device Information** .. list-table:: VDD diode - 2k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - VDD diode. One p+ stripe in n-well. * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - diodevdd_2kv * - Layout Cell Name - sg13g2_pr - diodevdd_2kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS diodevdd_2kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x1) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for diodevdd_2k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of ESD devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/diodevdd_2k_layout.png :width: 250 :align: center :alt: diodevdd_2k device - layout .. rst-class:: center Figure 4.7.1 Layout for diodevdd_2k ESD device diodevdd_4k ----------- **Device Information** .. list-table:: VDD diode - 4k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - VDD diode. Two p+ stripe in n-well. * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - diodevdd_4kv * - Layout Cell Name - sg13g2_pr - diodevdd_4kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS diodevdd_4kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x2) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for diodevdd_4k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/diodevdd_4k_layout.png :width: 250 :align: center :alt: diodevdd_4kv device - layout .. rst-class:: center Figure 4.7.2 Layout for diodevdd_4kv ESD device diodevss_2k ----------- **Device Information** .. list-table:: VSS diode - 2k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - VSS diode. One n+ stripe in p-well (Nwell hole). * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - diodevss_2kv * - Layout Cell Name - sg13g2_pr - diodevss_2kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS diodevss_2kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x1) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for diodevss_2k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/diodevss_2k_layout.png :width: 250 :align: center :alt: diodevss_2k device - layout .. rst-class:: center Figure 4.7.3 Layout for diodevss_2k ESD device diodevss_4k ----------- **Device Information** .. list-table:: VSS diode - 4k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - VSS diode. Two n+ stripe in p-well (Nwell hole). * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - diodevss_4kv * - Layout Cell Name - sg13g2_pr - diodevss_4kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS diodevss_4kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x2) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for diodevss_4k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/diodevss_4k_layout.png :width: 250 :align: center :alt: diodevss_4kv device - layout .. rst-class:: center Figure 4.7.4 Layout for diodevss_4kv ESD device idiodevdd_2k ------------ **Device Information** .. list-table:: Isolated VDD diode - 2k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated VDD diode. One p+ stripe in n-well. * - Device Recognition - Activ, pSD, Nwell, Recog.esd, nBuLay, PWell.blk * - Model Name - idiodevdd_2kv * - Layout Cell Name - sg13g2_pr - idiodevdd_2kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS idiodevdd_2kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x1) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for idiodevdd_2k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/idiodevdd_2k_layout.png :width: 250 :align: center :alt: idiodevdd_2k device - layout .. rst-class:: center Figure 4.7.5 Layout for idiodevdd_2k ESD device idiodevdd_4k ------------ **Device Information** .. list-table:: Isolated VDD diode - 4k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated VDD diode. Two p+ stripe in n-well. * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - idiodevdd_4kv * - Layout Cell Name - sg13g2_pr - idiodevdd_4kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS idiodevdd_4kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x2) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for idiodevdd_4k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/idiodevdd_4k_layout.png :width: 250 :align: center :alt: idiodevdd_4kv device - layout .. rst-class:: center Figure 4.7.6 Layout for idiodevdd_4kv ESD device idiodevss_2k ------------ **Device Information** .. list-table:: Isolated VSS diode - 2k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated VSS diode. One n+ stripe in p-well (Nwell hole). * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - idiodevss_2kv * - Layout Cell Name - sg13g2_pr - idiodevss_2kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS idiodevss_2kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x1) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for idiodevss_2k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/idiodevss_2k_layout.png :width: 250 :align: center :alt: idiodevss_2k device - layout .. rst-class:: center Figure 4.7.5 Layout for idiodevss_2k ESD device idiodevss_4k ------------ **Device Information** .. list-table:: Isolated VSS diode - 4k :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated VSS diode. Two n+ stripe in p-well (Nwell hole). * - Device Recognition - Activ, pSD, Nwell, Recog.esd * - Model Name - idiodevss_4kv * - Layout Cell Name - sg13g2_pr - idiodevss_4kv * - Parameters - m * - Netlist Syntax - `D1 VDD PAD VSS idiodevss_4kv m=1` * - Additional Notes - Junction area = 27.78 x 1.26 (x2) um2. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for idiodevss_4k Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/idiodevss_4k_layout.png :width: 250 :align: center :alt: idiodevss_4kv device - layout .. rst-class:: center Figure 4.7.8 Layout for idiodevss_4kv ESD device nmoscl_2 -------- **Device Information** .. list-table:: Isolated NMOS - ESD-2 :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated NMOS with the silicidation protection mask for the drain region * - Device Recognition - Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, Recog, Recog.esd * - Model Name - nmoscl_2 * - Layout Cell Name - sg13g2_pr - nmoscl_2 * - Parameters - m * - Netlist Syntax - `D1 VDD VSS nmoscl_2 m=1` * - Additional Notes - This is the grounded gate NMOS device for clamp. * - - Corresponding widths are 12 fingers. * - - Gate length is taken to be always 0.36 um. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for nmoscl_2 Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/nmoscl_2_layout.png :width: 800 :align: center :alt: nmoscl_2 device - layout .. rst-class:: center Figure 4.7.9 Layout for nmoscl_2 ESD device nmoscl_4 -------- **Device Information** .. list-table:: Isolated NMOS - ESD-4 :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Isolated NMOS with the silicidation protection mask for the drain region * - Device Recognition - Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, Recog, Recog.esd * - Model Name - nmoscl_4 * - Layout Cell Name - sg13g2_pr - nmoscl_4 * - Parameters - m * - Netlist Syntax - `D1 VDD VSS nmoscl_2 m=1` * - Additional Notes - This is the grounded gate NMOS device for clamp. * - - Corresponding widths are 24 fingers. * - - Gate length is taken to be always 0.36 um. **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for nmoscl_4 Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of devices (multiplicity) - ❌ - ✅ - ✅ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/nmoscl_4_layout.png :width: 800 :align: center :alt: nmoscl_4 device - layout .. rst-class:: center Figure 4.7.10 Layout for nmoscl_4 ESD device scr1 ---- .. note:: This device is currently a **work in progress**. **Device Information** .. list-table:: scr1 - ESD :header-rows: 1 :stub-columns: 1 * - Property - Value * - Description - Silicon Control Rectifier (Thyristor) * - Device Recognition - Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, nSD.blk, Recog.esd * - Model Name - scr1 * - Layout Cell Name - sg13g2_pr - scr1 * - Parameters - m **Parameters Information** .. list-table:: Schematic and LVS views Compatibility for scr1 Parameters :header-rows: 1 :stub-columns: 1 * - Parameter - Description - Schematic-View - LVS-View - LVS-Comparison * - m - Number of ESD device (multiplicity) - ❌ - ❌ - ❌ **Layout Information** (Refer to :ref:`layout layers`) .. image:: images/scr1_layout.png :width: 250 :align: center :alt: scr1 device - layout .. rst-class:: center Figure 4.7.11 Layout for scr1 ESD device