1. General

1.1. Scope

This document describes the design rules for IHPs SG13G2 SiGe BiCMOS technology.

1.2. List of abbreviations

List of abbreviations

Abbreviation

Explanation

BiCMOS

BipolarCMOS

HBT

HeterojunctionBipolarTransistor

IC

IntegratedCircuit

IHP

InnovationsforHighPerformanceMicroelectronics

MIM

Metal-Insulator-Metal

NMOS

NegativeChannelMetalOxideSemiconductor

PMOS

PositiveChannelMetalOxideSemiconductor

RD

ReferenceDocument

SiGe

SiliconGermanium

1.3. Layout Information

Note

1.1 The layout guidelines outlined in this document are stated in micrometers (μm).

1.2 All dimensions depicted in drawings correspond to the final silicon dimensions.

1.3 None of the drawings or schematics in this document are drawn to proportional scale.

1.4 Unless specified otherwise, all dimensions provided herein are considered to be minimum requirements.

1.4. Reference documents

[RD 1] IHP SG13G2 Process specification Rev. 1.3