4.5. Resistor Devices

4.5.1. rhigh

Device Information

Polysilicon Resistor of a High Sheet Resistance

Property	Value
Description	High-ohmic poly-Si resistor.
Device Recognition	GatPoly, nSD, pSD, SalBlock, ExtBlock, PolyRes
Model Name	res_rhigh
Layout Cell Name	sg13g2_pr - rhigh
Parameters	w, l, m, ps, b, R
Netlist Syntax	R0 net1 net2 res_rhigh w=0.5u l=1.2u ps=0.18u b=2 m=1
Additional Notes	It represents an unsalicided partial compensated low n-doped GatPoly resistor.
	Resistor body is defined by SalBlock drawing layer.
	Sheet resistance of 1360 Ω/sq.
	nSD only within Rhigh resistor device (pSD and nSD are identical).

Parameters Information

Schematic and LVS views Compatibility for rhigh Parameters

Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
W	PolyRes Width	✅	✅	✅
L	PolyRes Length	✅	✅	✅
m	Number of resistors (multiplicity)	✅	✅	✅
ps	poly space between bends	❌	✅	✅
b	Number of bends	❌	✅	✅
R	Resistance Value	✅	❌	❌

Layout Information (Refer to Layout Layers)

Figure 4.5.1 Layout for rhigh resistor device

4.5.2. rppd

Device Information

Polysilicon Resistor

Property	Value
Description	Medium resistance poly-Si resistor.
Device Recognition	GatPoly, pSD, SalBlock, ExtBlock, PolyRes
Model Name	res_rppd
Layout Cell Name	sg13g2_pr - rppd
Parameters	w, l, m, ps, b, R
Netlist Syntax	R0 net1 net2 res_rppd w=0.5u l=1.2u ps=0.18u b=2 m=1
Additional Notes	It represents the unsalicided p+ doped GatPoly resistor.
	Resistor body is defined by SalBlock drawing layer.
	Sheet resistance of 260 Ω/sq.

Parameters Information

Schematic and LVS views Compatibility for rppd Parameters

Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
W	PolyRes Width	✅	✅	✅
L	PolyRes Length	✅	✅	✅
m	Number of resistors (multiplicity)	✅	✅	✅
ps	Poly space between bends	❌	✅	✅
b	Number of bends	❌	✅	✅
R	Resistance Value	✅	❌	❌

Layout Information (Refer to Layout Layers)

Figure 4.5.2 Layout for rppd resistor device

4.5.3. rsil

Device Information

Silicide Resistor

Property	Value
Description	Salicided poly-Si resistor (low-ohmic).
Device Recognition	GGatPoly, RES, ExtBlock, PolyRes
Model Name	res_rsil
Layout Cell Name	sg13g2_pr - rsil
Parameters	w, l, m, ps, b, R
Netlist Syntax	R0 net1 net2 res_rsil w=0.5u l=1.2u ps=0.18u b=2 m=1
Additional Notes	It represents the salicided n+ doped GatPoly resistor.
	Resistor body is defined by SalBlock drawing layer.
	Sheet resistance of 7 Ω/sq.

Parameters Information

Schematic and LVS views Compatibility for rsil Parameters

Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
W	PolyRes Width	✅	✅	✅
L	PolyRes Length	✅	✅	✅
m	Number of resistors (multiplicity)	✅	✅	✅
ps	Poly space between bends	❌	✅	✅
b	Number of bends	❌	✅	✅
R	Resistance Value	✅	❌	❌

Layout Information (Refer to Layout Layers)

Figure 4.5.3 Layout for rsil resistor device

4.5.4. lvsres

Device Information

Metal Resistor

Property	Value
Description	Metal resistor used for LVS purpose.
Device Recognition	Metal1, Metal1.res
Model Name	lvsres
Layout Cell Name	sg13g2_pr - lvsres
Parameters	w, l, R

Parameters Information

Schematic and LVS views Compatibility for lvsres Parameters

Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
W	RES Width	❌	✅	✅
L	RES Length	❌	✅	✅
R	Resistance Value	❌	❌	❌

Layout Information (Refer to Layout Layers)

Figure 4.5.4 Layout for lvsres resistor device