1.4.3. Choosing the Right Drive Strength
The drive strength should be chosen based on the load capacitance the pad must drive.
The Liberty timing tables (cell_rise, cell_fall) are indexed by output load
capacitance (index_2), showing that delay scales with load (e.g. 4 mA: 1.48 ns at
1 pF vs 5.38 ns at 10 pF). The max_capacitance constraint sets the STA limit for
each variant.
Variant |
max_capacitance |
index_2 range |
Rout (SLOW) |
Source |
|---|---|---|---|---|
4 mA |
1.11 pF |
1 – 10 pF |
≈ 1.4 kΩ (3.3V / 2.3mA) |
Liberty L.3026 + DriveStrengthSim |
16 mA |
4.21 pF |
1 – 15 pF |
≈ 355 Ω (3.3V / 9.3mA) |
Liberty L.2640 + DriveStrengthSim |
30 mA |
4.53 pF |
2 – 30 pF |
≈ 190 Ω (3.3V / 17.4mA) |
Liberty L.2833 + DriveStrengthSim |
Warning
The 4 mA variant: in the slow process corner, Rout ≈ 3.3V / 2.3mA ≈ 1.4 kΩ. With a 10 kΩ resistive load: VOL ≈ 3.3 × 1.4k / (1.4k + 10k) ≈ 0.41V instead of 0V. For capacitive loads: t_rise ≈ C × ΔV / I = 5pF × 3.3V / 2.3mA ≈ 7.2 ns (vs 1.1 ns at NOM for 1 pF).
Load Type |
Typical Value |
Source |
Justification |
|---|---|---|---|
PCB trace (FR4) |
~1-2 pF/cm |
Cadence, PCBway |
εr=4.6, thickness=1.6mm, trace width=0.75mm |
IC pin (QFP package) |
~1 pF |
ResearchGate |
Parasitic model of package lead |
Chip-to-chip total |
2-15 pF |
Cadence, ResearchGate |
Trace + pin + connector; depends on length |
Wire bond |
0.05-0.6 pF |
HFE, TI SNOA405A |
Predominantly inductive; ~0.2 pF typical |
RF/wafer test probe |
~0.7-1 pF |
edaboard |
Agilent RF probe: 1MΩ // 0.7pF |
Oscilloscope probe |
8-15 pF |
edaboard |
Standard passive probe; not for pad characterization |
1.4.3.1. Sources
PDK files in $PDK_ROOT/ihp-sg13g2/libs.ref/sg13g2_io/:
lib/sg13g2_io_typ_1p2V_3p3V_25C.lib:max_capacitance,index_2bounds,drive_currentdoc/DriveStrengthSim.html: Sink current by process corner (for Rout calculation)
Mathematical deductions (Rout = IOVDD / Isink):
Calculation |
Formula |
Values |
Result |
|---|---|---|---|
Rout 4 mA SLOW |
IOVDD / Isink_slow |
3.3V / 2.3mA |
≈ 1.4 kΩ |
Rout 16 mA SLOW |
IOVDD / Isink_slow |
3.3V / 9.3mA |
≈ 355 Ω |
Rout 30 mA SLOW |
IOVDD / Isink_slow |
3.3V / 17.4mA |
≈ 190 Ω |
VOL (4 mA SLOW, Rload=10 kΩ) |
IOVDD × Rout / (Rout + Rload) |
3.3 × 1400 / (1400 + 10000) |
≈ 0.41V |
t_rise (4 mA SLOW, C=5 pF) |
C × ΔV / I |
5e-12 × 3.3 / 2.3e-3 |
≈ 7.2 ns |
External references for typical load capacitances:
IC pin capacitance ~1 pF (QFP): ResearchGate
Wire bond capacitance 0.05-0.6 pF: HFE, TI SNOA405A
RF/wafer probe capacitance ~0.7-1 pF: edaboard