2. Process Control Parameters

2.1. NMOS-Specs

Tip

VGS ≤ 1.65 V @ 125°C

NMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTN10x013	V	0.43	0.50	0.55	A.a1	WxL = 10 x 0.13 µm²
Threshold Voltage Long Channel Device	VTN10x10	V	0.16	0.20	0.24	A.a1	WxL = 10 x 10 µm²
Threshold Voltage Small Channel Device	VTN015x013	V	0.4	0.54	0.68	A.a1	WxL = 0.15 x 0.13 µm²
Saturation Current Short Channel Device	IDSN013	µA/µm	380	480	600	A.b1	WxL = 10 x 0.13 µm²
Off-Current Short Channel Device	IOFFN013	LOG10 (A/µm)		-10	-9	A.c1	WxL = 10 x 0.13 µm²
Drain Induced Barrier Lowering 0.1/1.2V	DIBLN013	mV/V	20	50	80	A.d1	WxL = 10 x 0.13 µm²
Sub Threshold Slope	SSN013	mV/dec	76	82	88	A.e	WxL = 10 x 0.13 µm²
Breakdown Voltage	BVDSSN013	V	2.0	2.7		A.f1	WxL = 10 x 0.13 µm²
Effective Channel Length	LEFFN013	µm	0.10	0.14	0.19	A.g1	WxL = 10 x 0.13 µm²
Effective Channel Width	WEFFN015	µm	0.09	0.15	0.22	A.h1	WxL = 0.15 x 0.13 µm²
Miller Capacitance NMOS	CMILLERN	fF/µm	0.32	0.36	0.40	A.k1
Junction Capacitance NMOS	CJUNCTIONN	fF/µm²	0.9	0.95	1.0	A.k
Junction Breakdown	BVNPW			12		A.f3

2.2. PMOS-Specs

Tip

VGS ≤ 1.65 V @ 125°C

PMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTP10x013	V	-0.53	-0.47	-0.41	A.a1	WxL = 10 x 0.13 µm²
Threshold Voltage Long Channel Device	VTP10x10	V	-0.41	-0.36	-0.31	A.a1	WxL = 10 x 10 µm²
Threshold Voltage Small Channel Device	VTP015x013	V	-0.58	-0.48	-0.38	A.a1	WxL = 0.15 x 0.13 µm²
Saturation Current Short Channel Device	IDSP013	µA/µm	-270	-215	-170	A.b1	WxL = 10 x 0.13 µm²
Off-Current Short Channel Device	IOFFP013	LOG10 (A/µm)		-10.3	-9.3	A.c1	WxL = 10 x 0.13 µm²
Drain Induced Barrier Lowering 0.1/1.2V	DIBLP013	mV/V	25	50	75	A.d1	WxL = 10 x 0.13 µm²
Sub Threshold Slope	SSP013	mV/dec	-87	-81	-75	A.e	WxL = 10 x 0.13 µm²
Breakdown Voltage	BVDSSP013	V		-2.9	-2.2	A.f1	WxL = 10 x 0.13 µm²
Effective Channel Length	LEFFP013	µm	0.07	0.10	0.13	A.g1	WxL = 10 x 0.13 µm²
Effective Channel Width	WEFFP015	µm	0.17	0.24	0.31	A.h1	WxL = 0.15 x 0.13 µm²
Miller Capacitance	CMILLERP	fF/µm	0.31	0.35	0.39	A.k1
Junction Capacitance	CJUNCTIONP	fF/µm²	0.8	0.85	0.9	A.k
Junction Breakdown	BVPNW	V		-12		A.f3

2.3. iNMOS-Specs

Tip

VGS ≤ 1.65 V @ 125°C

INMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTNI10x013	V	0.43	0.50	0.55	A.a1	WxL = 10 x 0.13 µm²
Saturation Current Short Channel Device	IDSNI013	µA/µm	380	480	600	A.b1	WxL = 10 x 0.13 µm²
Off-Current Short Channel Device	IOFFNI013	LOG10 (A/µm)		-10	-9	A.c1	WxL = 10 x 0.13 µm²
Drain Induced Barrier Lowering 0.1/1.2V	DIBLNI013	mV/V	20	50	80	A.d1	WxL = 10 x 0.13 µm²
Sub Threshold Slope	SSNI013	mV/dec	76	82	88	A.e	WxL = 10 x 0.13 µm²
Breakdown Voltage	BVDSSNI013	V	2.0	2.7		A.f1	WxL = 10 x 0.13 µm²

2.4. HV-NMOS-Specs

Tip

VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.6 µm

HV-NMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTNHV10x045	V	0.63	0.70	0.77	A.a2	WxL = 10 x 0.45 µm²
Threshold Voltage Long Channel Device	VTNHV10x10	V	0.65	0.69	0.73	A.a2	WxL = 10 x 10 µm²
Threshold Voltage Small Channel Device	VTNHV030x045	V	0.59	0.67	0.75	A.a2	WxL = 0.30 x 0.45 µm²
Saturation Current Short Channel Device	IDSNHV045	µA/µm	480	560	640	A.b2	WxL = 10 x 0.45 µm²
Off-Current Short Channel Device	IOFFNHV045	LOG10 (A/µm)		-12.5	-11.0	A.c2	WxL = 10 x 0.45 µm²
Drain Induced Barrier Lowering 0.1/1.8V	DIBLNHV045	mV/V	0	15	30	A.d2	WxL = 10 x 0.45 µm²
Sub Threshold Slope	SSNHV045	mV/dec	72	84	96	A.e	WxL = 10 x 0.45 µm²
Breakdown Voltage	BVDSSNHV045	V	5.3	6.1		A.f2	WxL = 10 x 0.45 µm²
Effective Channel Length	LEFFNHV045	µm	0.26	0.31	0.36	A.g2	WxL = 10 x 0.45 µm²
Effective Channel Width	WEFFNHV030	µm	0.23	0.28	0.33	A.h2	WxL = 0.30 x 0.45 µm²
Miller Capacitance	CMILLERNHV	fF/µm	0.42	0.45	0.48	A.k1
Junction Capacitance	CJUNC- TIONNHV	fF/µm²	0.74	0.80	0.86	A.k
Junction Breakdown	BVNPWhv	V		12		A.f3

2.5. HV-PMOS-Specs

Tip

VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.5 µm

HV-PMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTPHV10x04	V	-0.71	-0.65	-0.59	A.a2	WxL = 10 x 0.4 µm²
Threshold Voltage Long Channel Device	VTPHV10x10	V	-0.78	-0.70	-0.64	A.a2	WxL = 10 x 10 µm²
Threshold Voltage Small Channel Device	VTPHV03x04	V	-0.71	-0.64	-0.57	A.a2	WxL = 0.3 x 0.4 µm²
Saturation Current Short Channel Device	IDSPHV04	µA/µm	-290	-240	-190	A.b2	WxL = 10 x 0.4 µm²
Off-Current Short Channel Device	IOFFPHV04	LOG10 (A/µm)		-12.5	-11.5	A.c2	WxL = 10 x 0.4 µm²
Drain Induced Barrier Lowering 0.1/3.3V	DIBLPHV04	mV/V	0	5	15	A.d2	WxL = 10 x 0.4 µm²
Sub Threshold Slope	SSPHV04	mV/dec	-102	-92	-82	A.e	WxL = 10 x 0.4 µm²
Breakdown Voltage	BVDSSPHV04	V		-6.3	-5.3	A.f2	WxL = 10 x 0.4 µm²
Effective Channel Length	LEFFPHV04	µm	0.24	0.30	0.36	A.g2	WxL = 10 x 0.4 µm²
Effective Channel Width	WEFFPHV03	µm	0.26	0.33	0.40	A.h2	WxL = 0.3 x 0.4 µm²
Miller Capacitance	CMILLERPHV	fF/µm	0.32	0.35	0.38	A.k1
Junction Capacitance	CJUNCTION- PHV	fF/µm²	0.74	0.80	0.86	A.k
Junction Breakdown	BVPNWhv	V		-12		A.f3

2.6. HV-iNMOS-Specs

Tip

VGS ≤ 3.3V (Maximum) @ 27°C for LG ≥ 0.6 µm

HV-iNMOS - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Threshold Voltage Short Channel Device	VTNIHV10x045	V	0.63	0.70	0.77	A.a2	WxL = 10 x 0.45 µm²
Saturation Current Short Channel Device	IDSNIHV045	µA/µm	480	560	640	A.b2	WxL = 10 x 0.45 µm²
Off-Current Short Channel Device	IOFFNIHV045	LOG10 (A/µm)		-12.5	-11.0	A.c2	WxL = 10 x 0.45 µm²
Drain Induced Barrier Lowering 0.1/1.8V	DIBLNIHV045	mV/V	0	15	30	A.d2	WxL = 10 x 0.45 µm²
Sub Threshold Slope	SSNIHV045	mV/dec	72	84	96	A.e	WxL = 10 x 0.45 µm²
Breakdown Voltage	BVDSSNIHV045	V	5.2	6.1		A.f2	WxL = 10 x 0.45 µm²

2.7. Rsil-Specs

Tip

Rsil utilizes salicided, n-doped gate polysilicon as resistor material.

Rsil - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Sheet Resistance	RSNRSIL	Ω	6.2	7.0	7.8	A.i
Line Width Delta	DWRSIL	nm	-20	10	40	A.i
Temperature Coefficients	TC1NRSIL	ppm/K		3100		A.af
Temperature Coefficients	TC2NRSIL	ppm/K²		0.3		A.af
Matching Coefficient	MATRSIL1	nm		6		A.ac
Matching Coefficient	MATRSIL2	nm		1.4		A.ac
Metal-to-Body- Resistance	RCRSIL			4.5		A.ae
Max. Current Density							Is limited by contacts, please refer chapter 2.9

2.8. Rppd-Specs

Tip

Rppd utilizes unsalicided, p-doped gate polysilicon as resistor material. For realizing precision resistors, a line width of 2µm or higher is recommended.

Rppd - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Sheet Resistance	RSRPPD	Ω	235	260	285	A.i
Line Width Delta	DWRPPD	nm	-24	6	36	A.i
Temperature Coefficients	TC1NRPPD	ppm/K		170		A.af
Temperature Coefficients	TC2NRPPD	ppm/K²		0.4		A.af
Matching Coefficient	MATRPPD	nm		15		A.ac
Metal-to-Body- Resistance	RCRPPD	Ω*µm		35		A.ae
Temperature Coefficient Metal-toBody-Resistance	TC3NRPPD	ppm/K		-950
Max. Current Density	IMRPPD	mA/μm			1.2		11 years @105°C

2.9. Rhigh-Specs

Tip

Rhigh utilizes unsalicided, partially compensated gate polysilicon as resistor material.

Rhigh - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Sheet Resistance	RSRHIGH	Ω	1160	1360	1560	A.i
Line Width Delta	DWRHIGH	nm	-80	-40	0	A.i
Temperature Coefficients	TC1NRHIGH	ppm/K		-2300		A.af
Temperature Coefficients	TC2NRHIGH	ppm/K²		2.1		A.af
Matching Coefficient	MATRHIGH	nm		48		A.ac
Metal-to-Body- Resistance	RCRHIGH	Ω*µm		80		A.ae
Max. Current Density	IMRHIGH	mA/μm			0.6		11 years @105°C

2.10. Schottky_nbl1-Specs

Tip

This Schottky barrier diode utilizes Nbulay as cathode.

Schottky_nbl1 - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Reverse current density	IRNBL1	µA/µm²	-1	-0.1	0		0.3 x 1.0 µm² @ -2.5 V
Diode Voltage	VFNBL1	V	0.34	0.39	0.44		0.3 x 1.0 µm² @ 100 µA/µm²

2.11. S-Varicap-Specs

Tip

Thick Gate Oxide

S-Varicap - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Capacitance -3	SVAR_m3	fF/µm²	20.5	23	25.5		10x(3.74x0.3)µm² @15.8GHz
Capacitance 0	SCVAR_0	fF/µm²	32	35.3	37.5		10x(3.74x0.3)µm² @15.8GHz
Capacitance +3	SCVAR_3	fF/µm²	37.5	39.5	41.5		10x(3.74x0.3)µm² @15.8GHz
Q Factor -3	QFACTOR_m3		50	62	75		10x(3.74x0.3)µm² @15.8GHz
Q Factor 0	QFACTOR_0		35	43	50		10x(3.74x0.3)µm² @15.8GHz
Q Factor 3	QFACTOR_3		35	43	50		10x(3.74x0.3)µm² @15.8GHz

2.12. MIM Capacitor-Specs

MIM Capacitor - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Specific Area Capacitance	CMIMA	fF/µm²	1.35	1.5	1.65	A.k
Specific Capacitance MIM Perimeter	CMIMP	aF/µm		40		A.l
Breakdown Voltage	BVMIM	V	15	23		A.y
Voltage Coefficients	VCMIM1	ppm/V		-26		A.ah
Voltage Coefficients	VCMIM2	ppm/V²		5		A.ah
Temperature Coefficient	TCMIM1	ppm/K		3.6		A.ad
Temperature Coefficient	TCMIM2	ppm/K²		0.002		A.ad
Matching Coefficient	KCMIM	nm

2.13. Resistances, Line Width Deltas, Temperature Coefficients

Resistances, Line Width Deltas, Temperature Coefficients - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Substrate Resistivity	RSBLK	Ωcm	37.5	50	62.5		Specification: WAFPR3763
Salicided GatPoly (n+)							refer section 2.13
Unsalicized GatPoly (n+)							refer section 2.14
Unsalicided GatPoly (p+)							refer section 2.15
Metal1 Snake Sheet Resistance	SNAKEM1	mΩ	90	115	145		width = 0.16 µm
Unsalicided nSD-Activ Sheet Resistance	RSNSD0	Ω	55	67	79
Unsalicided pSD-Activ Sheet Resistance	RSPSD0	Ω	69	79	89
Metal2 Snake Sheet Resistance	SNAKEM2	mΩ	70	88	110		width = 0.20 µm
Metal3 Snake Sheet Resistance	SNAKEM3	mΩ	70	88	110		width = 0.20 µm
Metal4 Snake Sheet Resistance	SNAKEM4	mΩ	70	88	110		width = 0.20 µm
Metal5 Snake Sheet Resistance	SNAKEM5	mΩ	70	88	110		width = 0.20 µm
TopMetal1 Snake Sheet Resistance	SNAKETM1	mΩ	14	18	22		width = 1.5 µm
TopMetal2 Snake Sheet Resistance	SNAKETM2	mΩ	7.5	11	14.5		width = 2.0 µm
Metal1 Sheet Resistance	RSMET1	mΩ	85	110	135	A.i
Metal2 Sheet Resistance	RSMET2	mΩ	73	88	103	A.i
Metal3 Sheet Resistance	RSMET3	mΩ	73	88	103	A.i
Metal4 Sheet Resistance	RSMET4	mΩ	73	88	103	A.i
Metal5 Sheet Resistance	RSMET5	mΩ	73	88	103	A.i
TopMetal1 Sheet Resistance	RSTM1	mΩ	15	18	21	A.i
TopMetal2 Sheet Resistance	RSTM2	mΩ	7.5	11	14.5	A.i
Metal1 Line Width Delta	DWMET1	nm	-64	-24	16	A.i
Metal2 Line Width Delta	DWMET2	nm	-56	-16	24	A.i
Metal3 Line Width Delta	DWMET3	nm	-56	-16	24	A.i
Metal4 Line Width Delta	DWMET4	nm	-56	-16	24	A.i
Metal5 Line Width Delta	DWMET5	nm	-50	-20	34	A.i
TopMetal1 Line Width Delta	DWTM1	nm	-300	-100	100	A.i
TopMetal2 Line Width Delta	DWTM2	nm	-340	-140	140	A.i
Metal1 Sheet Resistance Temperature Coefficient	TC1RSMET1	ppm/K		3400		A.af
Metal2 Sheet Resistance Temperature Coefficient	TC1RSMET2	ppm/K		3500		A.af
Metal3 Sheet Resistance Temperature Coefficient	TC1RSMET3	ppm/K		3500		A.af
Metal4 Sheet Resistance Temperature Coefficient	TC1RSMET4	ppm/K		3500		A.af
Metal5 Sheet Resistance Temperature Coefficient	TC1RSMET5	ppm/K		3500		A.af
TopMetal1 Sheet Resis- tance Temperature Coef- ficient	TC1RSTM1	ppm/K		3700		A.af
TopMetal2 Sheet Resis- tance Temperature Coef- ficient	TC1RSTM2	ppm/K		3800		A.af

2.14. Contact & Via Resistances

Contact & Via Resistances - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Metal1 to Silicide on nSD-Activ	RCM1NSD	Ω/CNT	8	17	22	V = 1 V	93740 contact chain
Metal1 to Silicide on pSD-Activ	RCM1PSD	Ω/CNT	8	17	22	V = 1 V	93740 contact chain
Metal1 to Silicide on GatPoly (n+)	RCM1NPLY	Ω/CNT	8	15	20	V = 1 V	98566 contact chain
Metal1 to Silicide on GatPoly (p+)	RCM1PPLY	Ω/CNT	8	15	20	V = 1 V	98566 contact chain
Metal2 - Metal1	RVIA1	Ω/VIA	5	9	20	V = 1 V	103840 contact chain
Metal3 - Metal2	RVIA2	Ω/VIA	5	9	20	V = 1 V	103840 contact chain
Metal4 - Metal3	RVIA3	Ω/VIA	5	9	20	V = 1 V	103840 contact chain
Metal5 - Metal4	RVIA4	Ω/VIA	5	9	20	V = 1 V	103840 contact chain
TopMetal1 - Metal5	RTV1	Ω/VIA	1	2.2	4	V = 1 V	3276 contact chain
TopMetal2 - TopMetal1	RTV2	Ω/VIA	0.5	1.1	2.2	V = 1 V	1140 contact chain

2.15. Maximum Current Densities

Tip

(11 years @105°C)

Maximum Current Densities - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Metal1	IMAXM1	mA			0.36	A.v	w = 0.16 … 0.36 µm
Metal1	JMAXM1	mA/µm			1	A.v	w > 0.36 µm
Metal2	IMAXM2	mA			0.6	A.v	w = 0.2 … 0.3 µm
Metal2	JMAXM2	mA/µm			2	A.v	w > 0.3 µm
Metal3	IMAXM3	mA			0.6	A.v	w = 0.2 … 0.3 µm
Metal3	JMAXM3	mA/µm			2	A.v	w > 0.3 µm
Metal4	IMAXM4	mA			0.6	A.v	w = 0.2 … 0.3 µm
Metal4	JMAXM4	mA/µm			2	A.v	w > 0.3 µm
Metal5	IMAXM5	mA			0.6	A.v	w = 0.2 … 0.3 µm
Metal5	JMAXM5	mA/µm			2	A.v	w > 0.3 µm
TopMetal1	JMAXM6	mA/µm			15	A.v
TopMetal2	JMAXM7	mA/µm			16	A.v
Contact	JMAXCNT	mA/Cnt			0.3	A.v
Via1	JMAXVIA1	mA/Via			0.4	A.v
Via2	JMAXVIA2	mA/Via			0.4	A.v
Via3	JMAXVIA3	mA/Via			0.4	A.v
Via4	JMAXVIA4	mA/Via			0.4	A.v
TopVia1	JMAXTVIA1	mA/Via			1.4	A.v
TopVia2	JMAXTVIA2	mA/Via			10	A.v

2.16. Layer Thickness Values

Layer Thickness Values - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Shallow Trench Isolator Thickness	TSTI	nm		400		A.ag
Gate Polysilicon Thickness	TGATPOLY	nm	150	160	170	A.w
Thickness of Gate Oxide	TGOXNW	nm	2.25	2.45	2.65	A.x
Thickness of Gate Oxide HV-MOS	TGOX1NW	nm	6.8	7.3	7.8	A.x
Thickness of Gate Oxide	TGOXPW	nm	2.45	2.65	2.85	A.x
Thickness of Gate Oxide HV-MOS	TGOX1PW	nm	7.0	7.5	8.0	A.x
Metal1 Layer Thickness	TMET1	nm		420		A.ag
Metal2 Layer Thickness	TMET2	nm		490		A.ag
Metal3 Layer Thickness	TMET3	nm		490		A.ag
Metal4 Layer Thickness	TMET4	nm		490		A.ag
Metal5 Layer Thickness	TMET5	nm		490		A.ag
TopMetal1 Layer Thickness	TTM1	nm		2000		A.ag
Isolator Thickness between Metal1 and Activ	TILD0	nm		640		A.w,A.ag
Isolator Thickness between Metal2 and Metal1	TILD1	nm		540		A.w,A.ag
Isolator Thickness between Metal3 and Metal2	TILD2	nm		540		A.w,A.ag
Isolator Thickness between Metal4 and Metal3	TILD3	nm		540		A.w,A.ag
Isolator Thickness between Metal5 and Metal4	TILD4	nm		540		A.w,A.ag
Isolator Thickness between TopMetal1 and Metal5	TILDTM1	nm		850		A.w,A.ag
MIM Capacitor Dielectric Thickness	TISMIM	nm		40		A.w
MIM Capacitor Top Plate Thickness	TMIMTOP	nm		150		A.ag
Thickness Values of Passivation Layers	TPASS1	nm		1500		A.ag	Oxide layer SiN layer
Thickness Values of Passivation Layers	TPASS2	nm		400		A.ag	Oxide layer SiN layer
TopMetal2 Layer Thickness	TTM2	nm		3000		A.ag
Isolator Thickness between TopMetal2 and TopMetal1	TILTM2	nm		2800		A.w,A.ag

2.17. Parasitic Capacitances

Parasitic Capacitances - Process Control Parameters

Parameter	Name	Unit	Min	Target	Max	Meas.Cond.	Comment
Metal1 - Activ Area Capacitance	CAMET1ACT	aF/µm²	49	59	69	A.aq	A = 250·1200 µm²
Metal1 - Substrate Area Capacitance	CAMET1SUB	aF/µm²	31	37	43	A.aq	A = 250·1200 µm²
Metal1 - Metal2 Area Capacitance	CAMET1/2	aF/µm²	54	68	82	A.aq	A = 250·1200 µm²
Metal2 - Metal3 Area Capacitance	CAMET2/3	aF/µm²	54	68	82	A.aq	A = 250·1200 µm²
Metal3 - Metal4 Area Capacitance	CAMET3/4	aF/µm²	54	68	82	A.aq	A = 250·1200 µm²
Metal4 - Metal5 Area Capacitance	CAMET4/5	aF/µm²	54	68	82	A.aq	A = 250·1200 µm²
TopMetal1 - Metal5 Area Capacitance	CATOPMET1	aF/µm²	36	42.5	49	A.aq	A = 250·1200 µm²
TopMetal2 - TopMetal1 Area Capacitance	CATOPMET2	aF/µm²	10	13	16	A.aq	A = 250·1200 µm²