1. General

1.1. Scope

This document describes the design rules for IHP SG13G2 SiGe BiCMOS technology.

1.2. List of abbreviations

List of abbreviations

Abbreviation	Explanation
BiCMOS	Bipolar CMOS
HBT	Heterojunction Bipolar Transistor
IC	Integrated Circuit
IHP	Innovations for High Performance Microelectronics
MIM	Metal-Insulator-Metal
NMOS	Negative Channel Metal Oxide Semiconductor
OPC	Optical Proximity Correction
PMOS	Positive Channel Metal Oxide Semiconductor
RD	Reference Document
SiGe	Silicon Germanium

1.3. Layout Information

Note

1.1 The layout guidelines outlined in this document are stated in micrometers (μm).

1.2 All dimensions depicted in drawings correspond to the final silicon dimensions.

1.3 None of the drawings or schematics in this document are drawn to proportional scale.

1.4 Unless specified otherwise, all dimensions provided herein are considered to be minimum requirements.

1.4. Reference documents

[RD 1] IHP SG13G2 Process specification Rev. 1.2