4.7. ESD Devices

Tip

All ESD devices come in predetermined sizes, and the only parameter we keep track of is ‘m’, which is the number of ESD devices (multiplicity).

4.7.1. diodevdd_2k

Device Information

VDD diode - 2k
Property	Value
Description	VDD diode. One p+ stripe in n-well.
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	diodevdd_2kv
Layout Cell Name	sg13g2_pr - diodevdd_2kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS diodevdd_2kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x1) um2.

Parameters Information

Schematic and LVS views Compatibility for diodevdd_2k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of ESD devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.1 Layout for diodevdd_2k ESD device

4.7.2. diodevdd_4k

Device Information

VDD diode - 4k
Property	Value
Description	VDD diode. Two p+ stripe in n-well.
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	diodevdd_4kv
Layout Cell Name	sg13g2_pr - diodevdd_4kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS diodevdd_4kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x2) um2.

Parameters Information

Schematic and LVS views Compatibility for diodevdd_4k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.2 Layout for diodevdd_4kv ESD device

4.7.3. diodevss_2k

Device Information

VSS diode - 2k
Property	Value
Description	VSS diode. One n+ stripe in p-well (Nwell hole).
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	diodevss_2kv
Layout Cell Name	sg13g2_pr - diodevss_2kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS diodevss_2kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x1) um2.

Parameters Information

Schematic and LVS views Compatibility for diodevss_2k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.3 Layout for diodevss_2k ESD device

4.7.4. diodevss_4k

Device Information

VSS diode - 4k
Property	Value
Description	VSS diode. Two n+ stripe in p-well (Nwell hole).
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	diodevss_4kv
Layout Cell Name	sg13g2_pr - diodevss_4kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS diodevss_4kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x2) um2.

Parameters Information

Schematic and LVS views Compatibility for diodevss_4k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.4 Layout for diodevss_4kv ESD device

4.7.5. idiodevdd_2k

Device Information

Isolated VDD diode - 2k
Property	Value
Description	Isolated VDD diode. One p+ stripe in n-well.
Device Recognition	Activ, pSD, Nwell, Recog.esd, nBuLay, PWell.blk
Model Name	idiodevdd_2kv
Layout Cell Name	sg13g2_pr - idiodevdd_2kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS idiodevdd_2kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x1) um2.

Parameters Information

Schematic and LVS views Compatibility for idiodevdd_2k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.5 Layout for idiodevdd_2k ESD device

4.7.6. idiodevdd_4k

Device Information

Isolated VDD diode - 4k
Property	Value
Description	Isolated VDD diode. Two p+ stripe in n-well.
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	idiodevdd_4kv
Layout Cell Name	sg13g2_pr - idiodevdd_4kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS idiodevdd_4kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x2) um2.

Parameters Information

Schematic and LVS views Compatibility for idiodevdd_4k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.6 Layout for idiodevdd_4kv ESD device

4.7.7. idiodevss_2k

Device Information

Isolated VSS diode - 2k
Property	Value
Description	Isolated VSS diode. One n+ stripe in p-well (Nwell hole).
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	idiodevss_2kv
Layout Cell Name	sg13g2_pr - idiodevss_2kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS idiodevss_2kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x1) um2.

Parameters Information

Schematic and LVS views Compatibility for idiodevss_2k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.5 Layout for idiodevss_2k ESD device

4.7.8. idiodevss_4k

Device Information

Isolated VSS diode - 4k
Property	Value
Description	Isolated VSS diode. Two n+ stripe in p-well (Nwell hole).
Device Recognition	Activ, pSD, Nwell, Recog.esd
Model Name	idiodevss_4kv
Layout Cell Name	sg13g2_pr - idiodevss_4kv
Parameters	m
Netlist Syntax	D1 VDD PAD VSS idiodevss_4kv m=1
Additional Notes	Junction area = 27.78 x 1.26 (x2) um2.

Parameters Information

Schematic and LVS views Compatibility for idiodevss_4k Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.8 Layout for idiodevss_4kv ESD device

4.7.9. nmoscl_2

Device Information

Isolated NMOS - ESD-2
Property	Value
Description	Isolated NMOS with the silicidation protection mask for the drain region
Device Recognition	Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, Recog, Recog.esd
Model Name	nmoscl_2
Layout Cell Name	sg13g2_pr - nmoscl_2
Parameters	m
Netlist Syntax	D1 VDD VSS nmoscl_2 m=1
Additional Notes	This is the grounded gate NMOS device for clamp.
	Corresponding widths are 12 fingers.
	Gate length is taken to be always 0.36 um.

Parameters Information

Schematic and LVS views Compatibility for nmoscl_2 Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.9 Layout for nmoscl_2 ESD device

4.7.10. nmoscl_4

Device Information

Isolated NMOS - ESD-4
Property	Value
Description	Isolated NMOS with the silicidation protection mask for the drain region
Device Recognition	Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, Recog, Recog.esd
Model Name	nmoscl_4
Layout Cell Name	sg13g2_pr - nmoscl_4
Parameters	m
Netlist Syntax	D1 VDD VSS nmoscl_2 m=1
Additional Notes	This is the grounded gate NMOS device for clamp.
	Corresponding widths are 24 fingers.
	Gate length is taken to be always 0.36 um.

Parameters Information

Schematic and LVS views Compatibility for nmoscl_4 Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of devices (multiplicity)	❌	✅	✅

Layout Information (Refer to Layout Layers)

Figure 4.7.10 Layout for nmoscl_4 ESD device

4.7.11. scr1

Note

This device is currently a work in progress.

Device Information

scr1 - ESD
Property	Value
Description	Silicon Control Rectifier (Thyristor)
Device Recognition	Activ, GatPoly, pSD, SalBlock, Nwell, nBuLay, Substrate, ThickGateOx, nSD.blk, Recog.esd
Model Name	scr1
Layout Cell Name	sg13g2_pr - scr1
Parameters	m

Parameters Information

Schematic and LVS views Compatibility for scr1 Parameters
Parameter	Description	Schematic-View	LVS-View	LVS-Comparison
m	Number of ESD device (multiplicity)	❌	❌	❌

Layout Information (Refer to Layout Layers)

Figure 4.7.11 Layout for scr1 ESD device