3. Extra DRC rules

Name

Description

Value (um2)

NW.a

Min. NWell width

0.62

NW.d1

Min. NWell space to external N+Activ inside ThickGateOx

0.62

NW.f

Min. NWell space to substrate tie in P+Activ not inside ThickGateOx

0.24

NW.f1

Min. NWell space to substrate tie in P+Activ inside ThickGateOx

0.62

PWB.a

Min. PWell:block width

0.62

PWB.b

Min. PWell:block space or notch

0.62

PWB.c

Min. PWell:block space to unrelated NWell

0.62

NBL.a

Min. nBuLay width

1

NBLB.a

Min. nBuLay:block width

1.5

NBLB.b

Min. nBuLay:block space or notch

1

NBLB.c

Min. nBuLay enclosure of nBuLay:block

1

NBLB.d

Min. nBuLay:block space to unrelated nBuLay

1.5

Act.d

Min. Activ area (um2)

0.122

Act.e

Min. Activ enclosed area (um2)

0.15

AFil.a

Max. Activ:filler width

5

AFil.a1

Min. Activ:filler width

1

AFil.b

Min. Activ:filler space

0.42

TGO.a

Min. ThickGateOx extension over Activ

0.27

TGO.b

Min. space between ThickGateOx and Activ outside thick gate oxide region

0.27

TGO.c

Min. ThickGateOx extension over GatPoly over Activ

0.34

TGO.d

Min. space between ThickGateOx and GatPoly over Activ outside thick gate oxide region

0.34

TGO.e

Min. ThickGateOx space (merge if less than this value)

0.86

Gat.a3

Min. GatPoly width for channel length of 3.3 V NFET

0.45

Gat.a4

Min. GatPoly width for channel length of 3.3 V PFET

0.4

Gat.b1

Min. space between unrelated 3.3 V GatPoly over Activ regions

0.25

Gat.c

Min. GatPoly extension over Activ (end cap)

0.18

Gat.e

Min. GatPoly area (um2)

0.09

Gat.f

45-degree and 90-degree angles for GatPoly on Activ area are not allowed

0

GFil.a

Max. GatPoly:filler width

5

GFil.b

Min. GatPoly:filler width

0.7

GFil.c

Min. GatPoly:filler space

0.8

GFil.f

Min. GatPoly:filler space to TRANS

1.1

GFil.j

Min. GatPoly:filler extension over Activ:filler (end cap)

0.18

pSD.a

Min. pSD width

0.31

pSD.b

Min. pSD space or notch (Note 1)

0.31

pSD.c

Min. pSD enclosure of P+Activ in NWell

0.18

pSD.d

Min. pSD space to unrelated N+Activ in PWell

0.18

pSD.d1

Min. pSD space to N+Activ in NWell

0.03

pSD.e

Min. pSD overlap of Activ at one position when forming abutted substrate tie (Note 2)

0.3

pSD.f

Min. Activ extension over pSD at one position when forming abutted NWell tie (Note 2)

0.3

pSD.g

Min. N+Activ or P+Activ area (um2) when forming abutted tie (Note 2)

0.09

pSD.i

Min. pSD enclosure of PFET gate not inside ThickGateOx

0.3

pSD.i1

Min. pSD enclosure of PFET gate inside ThickGateOx

0.4

pSD.j

Min. pSD space to NFET gate not inside ThickGateOx

0.3

pSD.j1

Min. pSD space to NFET gate inside ThickGateOx

0.4

pSD.k

Min. pSD area (um2)

0.25

pSD.l

Min. pSD enclosed area (um2)

0.25

pSD.m

Min. pSD space to n-type poly resistors

0.18

pSD.n

Min. pSD enclosure of p-type poly resistors

0.18

nSDB.a

Min. nSD:block width

0.31

nSDB.b

Min. nSD:block space or notch

0.31

nSDB.c

Min. nSD:block space to unrelated pSD

0.31

nSDB.e

Min. nSD:block space to Cont (Note 2)

0

EXT.a

Min. EXTBlock width

0.31

EXT.b

Min. EXTBlock space or notch

0.31

EXT.c

Min. EXTBlock space to pSD

0.31

Sal.a

Min. SalBlock width

0.42

Sal.b

Min. SalBlock space or notch

0.42

Sal.c

Min. SalBlock extension over Activ or GatPoly

0.2

Sal.d

Min. SalBlock space to unrelated Activ or GatPoly

0.2

Sal.e

Min. SalBlock space to Cont

0.2

Cnt.b1

Min. Cont space in a contact array of more than 4 rows and more then 4 columns (Note 1)

0.2

Cnt.f

Min. Cont on Activ space to GatPoly

0.11

Cnt.g

Cont must be within Activ or GatPoly

Cnt.h

Cont must be covered with Metal1

Cnt.j

Cont on GatPoly over Activ is not allowed

CntB.a

Min. and max. ContBar width

0.16

CntB.a1

Min. ContBar length

0.34

CntB.b

Min. ContBar space

0.28

CntB.b2

Min. ContBar space to Cont

0.22

CntB.e

Min. ContBar on GatPoly space to Activ

0.14

CntB.f

Min. ContBar on Activ space to GatPoly

0.11

CntB.g

ContBar must be within Activ or GatPoly

CntB.g1

Min. pSD space to ContBar on nSD-Activ

0.09

CntB.g2

Min. pSD overlap of ContBar on pSD-Activ

0.09

CntB.h

ContBar must be covered with Metal1

CntB.j

ContBar on GatPoly over Activ is not allowed

M1.c

Min. Metal1 enclosure of Cont

0

M1.c1

Min. Metal1 endcap enclosure of Cont (Note 1)

0.05

M1.d

Min. Metal1 area (um2)

0.09

M2.c

Min. Metal2 enclosure of Via1

0.005

M2.c1

Min. Metal2 endcap enclosure of Via1 (Note 1)

0.05

M2.d

Min. Metal2 area (um2)

0.144

M3.c

Min. Metal3 enclosure of Via2

0.005

M3.c1

Min. Metal3 endcap enclosure of Via2 (Note 1)

0.05

M3.d

Min. Metal3 area (um2)

0.144

M4.c

Min. Metal4 enclosure of Via3

0.005

M4.c1

Min. Metal4 endcap enclosure of Via3 (Note 1)

0.05

M4.d

Min. Metal4 area (um2)

0.144

M5.c

Min. Metal5 enclosure of Via4

0.005

M5.c1

Min. Metal5 endcap enclosure of Via4 (Note 1)

0.05

M5.d

Min. Metal5 area (um2)

0.144

M1Fil.a1

Min. Metal1:filler width

1

M1Fil.b

Min. Metal1:filler space

0.42

M1Fil.d

Min. Metal1:filler space to TRANS

1

M2Fil.a1

Min. Metal2:filler width

1

M2Fil.b

Min. Metal2:filler space

0.42

M2Fil.d

Min. Metal2:filler space to TRANS

1

M3Fil.a1

Min. Metal3:filler width

1

M3Fil.b

Min. Metal3:filler space

0.42

M3Fil.d

Min. Metal3:filler space to TRANS

1

M4Fil.a1

Min. Metal4:filler width

1

M4Fil.b

Min. Metal4:filler space

0.42

M4Fil.d

Min. Metal4:filler space to TRANS

1

M5Fil.a1

Min. Metal5:filler width

1

M5Fil.b

Min. Metal5:filler space

0.42

M5Fil.d

Min. Metal5:filler space to TRANS

1

V1.b1

Min. Via1 space in an array of more than 3 rows and more then 3 columns (Note 1)

0.29

V1.c1

Min. Metal1 endcap enclosure of Via1 (Note 2)

0.05

V2.b1

Min. Via2 space in an array of more than 3 rows and more then 3 columns (Note 1)

0.29

V2.c1

Min. Metal2 endcap enclosure of Via2 (Note 2)

0.05

V3.b1

Min. Via3 space in an array of more than 3 rows and more then 3 columns (Note 1)

0.29

V3.c1

Min. Metal3 endcap enclosure of Via3 (Note 2)

0.05

V4.b1

Min. Via4 space in an array of more than 3 rows and more then 3 columns (Note 1)

0.29

V4.c1

Min. Metal4 endcap enclosure of Via4 (Note 2)

0.05

TM1Fil.a

Min. TopMetal1:filler width

5

TM1Fil.b

Min. TopMetal1:filler space

3

TM1Fil.d

Min. TopMetal1:filler space to TRANS

4.9

TM2Fil.a

Min. TopMetal2:filler width

5

TM2Fil.b

Min. TopMetal2:filler space

3

TM2Fil.d

Min. TopMetal2:filler space to TRANS

4.9

npn13G2.a

Min. and max. npn13G2 emitter length

0.9

npn13G2L.a

Min. npn13G2L emitter length

1

npn13G2L.b

Max. npn13G2L emitter length

2.5

npn13G2V.a

Min. npn13G2V emitter length

1

npn13G2V.b

Max. npn13G2V emitter length

5

Rsil.a

Min. GatPoly width

0.5

Rsil.b

Min. RES space to Cont

0.12

Rsil.c

Min. RES extension over GatPoly

0

Rsil.d

Min. pSD space to GatPoly

0.18

Rsil.e

Min. EXTBlock enclosure of GatPoly

0.18

Rsil.f

Min. RES length

0.5

Rppd.a

Min. GatPoly width

0.5

Rppd.b

Min. pSD enclosure of GatPoly

0.18

Rppd.c

Min. and max. SalBlock space to Cont

0.2

Rppd.e

Min. SalBlock length

0.5

Rhi.a

Min. GatPoly width

0.5

Rhi.b

pSD and nSD are identical (Note 1)

Rhi.c

Min. pSD and nSD enclosure of GatPoly

0.18

Rhi.d

Min. and max. SalBlock space to Cont

0.2

Rhi.f

Min. SalBlock length

0.5

nmosi.b

Min. nBuLay enclosure of Iso-PWell-Activ (Note 1)

1.24

nmosi.c

Min. NWell space to Iso-PWell-Activ

0.39

nmosi.d

Min. NWell-nBuLay width forming an unbroken ring around any Iso-PWell-Activ (Note 2)

0.62

nmosi.f

Min. nSD:block width to separate ptap in nmosi

0.62

nmosi.g

Min. SalBlock overlap of nSD:block over Activ

0.15

Sdiod.a

Min. and max. PWell:block enclosure of ContBar

0.25

Sdiod.b

Min. and max. nSD:block enclosure of ContBar

0.4

Sdiod.c

Min. and max. SalBlock enclosure of ContBar

0.45

Pad.aR

Min. recommended Pad width

30

Pad.a1

Max. Pad width

150

Pad.bR

Min. recommended Pad space

8.4

Pad.d

Min. Pad space to EdgeSeal

7.5

Pad.dR

Min. recommended Pad to EdgeSeal space (Note 1)

25

Pad.d1R

Min. recommended Pad to Activ (inside chip area) space

11.2

Pad.gR

TopMetal1 (within dfpad) enclosure of TopVia2

1.4

Pad.jR

No devices under Pad allowed (Note 2)

Pad.kR

TopVia2 under Pad not allowed (Note 3)

Padc.d

Min. CuPillarPad space to EdgeSeal

30

Seal.a_Activ

Min. EdgeSeal-Activ width

3.5

Seal.a_pSD

Min. EdgeSeal-pSD width

3.5

Seal.a_Metal1

Min. EdgeSeal-Metal1 width

3.5

Seal.a_Metal2

Min. EdgeSeal-Metal2 width

3.5

Seal.a_Metal3

Min. EdgeSeal-Metal3 width

3.5

Seal.a_Metal4

Min. EdgeSeal-Metal4 width

3.5

Seal.a_Metal5

Min. EdgeSeal-Metal5 width

3.5

Seal.a_TopMetal1

Min. EdgeSeal-TopMetal1 width

3.5

Seal.a_TopMetal2

Min. EdgeSeal-TopMetal2 width

3.5

Seal.c

EdgeSeal-Cont ring width

0.16

Seal.c1.Via1

EdgeSeal-Via1 ring width

0.19

Seal.c1.Via2

EdgeSeal-Via2 ring width

0.19

Seal.c1.Via3

EdgeSeal-Via3 ring width

0.19

Seal.c1.Via4

EdgeSeal-Via4 ring width

0.19

Seal.c2

EdgeSeal-TopVia1 ring width

0.42

Seal.c3

EdgeSeal-TopVia2 ring width

0.9

Seal.e

Min. Passiv ring width outside of sealring

4.2

MIM.a

Min. MIM width

1.14

MIM.b

Min. MIM space

0.6

MIM.e

Min. TopMetal1 space to MIM

0.6

MIM.f

Min. MIM area per MIM device (um2)

1.3

MIM.g

Max. MIM area per MIM device (um2)

5625

MIM.h

TopVia1 must be over MIM

LU.a

Max. space from any portion of P+Activ inside NWell to an nSD-NWell tie

20

LU.c

Max. extension of an abutted NWell tie beyond Cont

6

LU.c1

Max. extension of an abutted substrate tie beyond Cont

6

LU.d

Max. extension of NWell tie Activ tie beyond Cont

6

LU.d1

Max. extension of an substrate tie Activ beyond Cont

6

Slt.a.M1

Min. Metal1:slit width

2.8

Slt.b.M1

Max. Metal1:slit width

20

Slt.c.M1

Max. Metal1 width without requiring a slit

30

Slt.e.M1

No slits required on bond pads

Slt.f.M1

Min. Metal1 enclosure of Metal1:slit

1

Slt.h1

Min. Metal1:slit space to Cont and Via1

0.3

Slt.a.M2

Min. Metal2:slit width

2.8

Slt.b.M2

Max. Metal2:slit width

20

Slt.c.M2

Max. Metal2 width without requiring a slit

30

Slt.e.M2

No slits required on bond pads

Slt.f.M2

Min. Metal2 enclosure of Metal2:slit

1

Slt.h2.M2

Min. Metal2:slit space to Via1 and Via2

0.3

Slt.a.M3

Min. Metal3:slit width

2.8

Slt.b.M3

Max. Metal3:slit width

20

Slt.c.M3

Max. Metal3 width without requiring a slit

30

Slt.e.M3

No slits required on bond pads

Slt.f.M3

Min. Metal3 enclosure of Metal2:slit

1

Slt.h2.M3

Min. Metal3:slit space to Via2 and Via3

0.3

Slt.a.M4

Min. Metal4:slit width

2.8

Slt.b.M4

Max. Metal4:slit width

20

Slt.c.M4

Max. Metal4 width without requiring a slit

30

Slt.e.M4

No slits required on bond pads

Slt.f.M4

Min. Metal4 enclosure of Metal4:slit

1

Slt.h2.M4

Min. Metal4:slit space to Via3 and Via4

0.3

Slt.a.M5

Min. Metal5:slit width

2.8

Slt.b.M5

Max. Metal5:slit width

20

Slt.c.M5

Max. Metal5 width without requiring a slit

30

Slt.e.M5

No slits required on bond pads

Slt.f.M5

Min. Metal5 enclosure of Metal5:slit

1

Slt.g.M5

Min. Metal5:slit and TopMetal1:slit space to MIM

0.6

Slt.h2.M5

Min. Metal5:slit space to Via4 and Via5

0.3

Slt.a.TM1

Min. TopMetal1:slit width

2.8

Slt.b.TM1

Max. TopMetal1:slit width

20

Slt.c.TM1

Max. TopMetal1 width without requiring a slit

30

Slt.e.TM1

No slits required on bond pads

Slt.f.TM1

Min. TopMetal1 enclosure of TopMetal1:slit

1

Slt.g.TM1

Min. Metal5:slit and TopMetal1:slit space to MIM

0.6

Slt.h3

Min. TopMetal1:slit space to TopVia1 and TopVia2

1

Slt.a.TM2

Min. TopMetal2:slit width

2.8

Slt.b.TM2

Max. TopMetal2:slit width

20

Slt.c.TM2

Max. TopMetal2 width without requiring a slit

30

Slt.e.TM2

No slits required on bond pads

Slt.f.TM2

Min. TopMetal2 enclosure of TopMetal2:slit

1

Slt.h4

Min. TopMetal2:slit space to TopVia2

1

NW.d1.dig

Min. NWell space to external N+Activ inside ThickGateOx

0.31

NW.f1.dig

Min. NWell space to substrate tie in P+Activ inside ThickGateOx

0.24

LBE.b2

Min. LBE area (um2)

30000

LBE.e.dfPad

Min. LBE space to dfpad and Passiv

50

LBE.e.Passiv

Min. LBE space to dfpad and Passiv

50

LBE.f

Min. LBE space to Activ

30

TSV_G.a

DeepVia has to be a ring structure

TSV_G.d

Min. DeepVia space

25

TSV_G.f

Min. PWell:block enclosure of DeepVia

2.5

TSV_G.g

Min. Metal1 enclosure of DeepVia ring structure

1.5

TSV_G.i

Max. global DeepVia density [%]

1

TSV_G.j

Max. DeepVia coverage ratio for any 500.0 x 500.0 um2 chip area [%]

10

OffGrid.NWell

NWell is off-grid

OffGrid.PWell

PWell is off-grid

OffGrid.PWell_block

PWell_block is off-grid

OffGrid.nBuLay

nBuLay is off-grid

OffGrid.nBuLay_block

nBuLay_block is off-grid

OffGrid.Activ

Activ is off-grid

OffGrid.ThickGateOx

ThickGateOx is off-grid

OffGrid.Activ_filler

Activ_filler is off-grid

OffGrid.GatPoly_filler

GatPoly_filler is off-grid

OffGrid.GatPoly

GatPoly is off-grid

OffGrid.pSD

pSD is off-grid

OffGrid.nSD

nSD is off-grid

OffGrid.nSD_block

nSD_block is off-grid

OffGrid.EXTBlock

EXTBlock is off-grid

OffGrid.SalBlock

SalBlock is off-grid

OffGrid.Cont

Cont is off-grid

OffGrid.Activ_nofill

Activ_nofill is off-grid

OffGrid.GatPoly_nofill

GatPoly_nofill is off-grid

OffGrid.Metal1

Metal1 is off-grid

OffGrid.Via1

Via1 is off-grid

OffGrid.Metal2

Metal2 is off-grid

OffGrid.Via2

Via2 is off-grid

OffGrid.Metal3

Metal3 is off-grid

OffGrid.Via3

Via3 is off-grid

OffGrid.Metal4

Metal4 is off-grid

OffGrid.Via4

Via4 is off-grid

OffGrid.Metal5

Metal5 is off-grid

OffGrid.MIM

MIM is off-grid

OffGrid.TopVia1

TopVia1 is off-grid

OffGrid.TopMetal1

TopMetal1 is off-grid

OffGrid.TopVia2

TopVia2 is off-grid

OffGrid.TopMetal2

TopMetal2 is off-grid

OffGrid.Passiv

Passiv is off-grid

OffGrid.Metal1_filler

Metal1_filler is off-grid

OffGrid.Metal2_filler

Metal2_filler is off-grid

OffGrid.Metal3_filler

Metal3_filler is off-grid

OffGrid.Metal4_filler

Metal4_filler is off-grid

OffGrid.Metal5_filler

Metal5_filler is off-grid

OffGrid.TopMetal1_filler

TopMetal1_filler is off-grid

OffGrid.TopMetal2_filler

TopMetal2_filler is off-grid

OffGrid.Metal1_nofill

Metal1_nofill is off-grid

OffGrid.Metal2_nofill

Metal2_nofill is off-grid

OffGrid.Metal3_nofill

Metal3_nofill is off-grid

OffGrid.Metal4_nofill

Metal4_nofill is off-grid

OffGrid.Metal5_nofill

Metal5_nofill is off-grid

OffGrid.TopMetal1_nofill

TopMetal1_nofill is off-grid

OffGrid.TopMetal2_nofill

TopMetal2_nofill is off-grid

OffGrid.NoMetFiller

NoMetFiller is off-grid

OffGrid.Metal1_slit

Metal1_slit is off-grid

OffGrid.Metal2_slit

Metal2_slit is off-grid

OffGrid.Metal3_slit

Metal3_slit is off-grid

OffGrid.Metal4_slit

Metal4_slit is off-grid

OffGrid.Metal5_slit

Metal5_slit is off-grid

OffGrid.TopMetal1_slit

TopMetal1_slit is off-grid

OffGrid.TopMetal2_slit

TopMetal2_slit is off-grid

OffGrid.EdgeSeal

EdgeSeal is off-grid

OffGrid.dfpad

dfpad is off-grid

OffGrid.LBE

LBE is off-grid