1.1. Main Processing Sequence and Cross-Section Schematic

Process Flow

  • Isolation:

    • Shallow trench isolation (STI)

  • Well Formation:

    • NWell formation

    • PWell formation

    • Triple Well formation

  • Gate Stack:

    • Poly Gate formation

  • Active Region Definition:

    • Bipolar Window opening

    • Collector Window opening

    • Emitter opening

  • Polysilicon Gates:

    • Emitter Poly definition

    • Base Poly definition

  • Source/Drain Formation:

    • nSD implant / drive

    • pSD implant / drive

  • Metallization:

    • Salicide formation

    • Contact definition

    • Metal Layer Stack:

      • Metal1

      • Via1

      • Metal2

      • Via2

      • … (repeat for Metal3, Via3, …, Metal5)

  • Advanced Features:

    • MIM formation (Metal-Insulator-Metal capacitor)

  • Top Metal Layers:

    • TopVia1

    • TopMetal1

    • TopVia2

    • TopMetal2

  • Finishing Steps:

    • Passivation

  • Testing:

    • Parametric test

Cross-Section Schematic

Figure 1.1.1 SG13 process cross-section (not to scale)

BEOL Cross-Section Schematic

Figure 1.1.2 BEOL detail cross-section below Metal1 for passive modeling (not to scale).

Tip

  • ILDO consists of oxide (590nm) and nitride (50nm).

  • For a homogeneous ILDO with εR=4.1 the effective thickness corresponds to deff=620nm.