3.3. Capacitors¶
This page documents the capacitor primitives currently exposed through the SG13G2 schematic libraries.
3.3.1. Capacitor Overview¶
The current primitive set includes MIM capacitors, RF MIM capacitors, a parasitic-capacitance symbol, and the high-voltage SVaricap device.
Symbol |
Model |
Notes |
|---|---|---|
|
|
scalable MIM capacitor |
|
|
RF-oriented MIM capacitor with body node |
|
|
explicit parasitic-capacitance symbol |
|
|
high-voltage variable-capacitance device |
3.3.2. Capacitor User Parameters¶
Parameter |
Meaning |
Used by |
Notes |
|---|---|---|---|
|
capacitor width |
|
geometry parameter used directly in netlisting |
|
capacitor length |
|
geometry parameter used directly in netlisting |
|
multiplicity |
|
scales the displayed capacitance expression |
|
feed width |
|
present in RF MIM symbol netlisting |
|
multiplier |
|
replicated variable-capacitance fingers |
|
explicit capacitance value |
|
used directly without geometry derivation |
3.3.3. Capacitor Default Symbol Templates¶
Symbol |
Default values |
|---|---|
|
|
|
|
|
|
|
|
3.3.4. Displayed Capacitance Expressions¶
For the MIM capacitor symbols, the displayed capacitance is computed in the symbol text from the geometry parameters.
3.3.4.1. cap_cmim¶
The symbol displays:
3.3.4.2. cap_rfcmim¶
The RF MIM symbol displays the same capacitance expression:
3.3.4.3. cap_cpara¶
The parasitic capacitor symbol does not derive its value from geometry. It uses the user-entered capacitance directly:
3.3.5. Interleaved MoM Capacitor¶
In addition to the MIM-based capacitor family, SG13G2 also has development
data for an interleaved metal-oxide-metal capacitor built from stacked MOM
layers. The source used here is MOM model development notes v4 by Volker
Muehlhaus, dated 09 November 2022.
3.3.5.1. Geometry and scaling¶
The documented MOM structure is built from repeating unit cells of size
840 nm x 890 nm.
The field plots in the model notes indicate that the inner unit cells have a nearly homogeneous electric-field distribution, so the active-area capacitance scales approximately linearly with the number of cells.
3.3.5.2. Active-area capacitance¶
The notes distinguish between nominal geometry and active area. Active area is the portion of the MOM array that is paired with a counter-electrode; outer edge rows are not counted into this area term.
For the model values recommended from the study, the active-area capacitance is:
MOM layer count |
Active-area capacitance density |
Note |
|---|---|---|
3 layers |
about |
based on Empire extraction of active-area scaling |
4 layers |
about |
based on Empire extraction of active-area scaling |
5 layers |
about |
corrected for true via size after comparing fast and accurate models |
This gives the core capacitance term:
where C_dens is chosen from the table above.
3.3.5.3. Feed capacitance¶
The model notes distinguish two feed configurations.
3.3.5.3.1. Same-side feed¶
For same-side feed, the total capacitance includes a feed-overlap contribution.
The extracted feed-capacitance coefficients are:
MOM layer count |
Feed capacitance coefficient |
|---|---|
3 layers |
about |
4 layers |
about |
5 layers |
about |
This gives the single-sided feed term:
3.3.5.3.2. Opposite-side feed¶
For opposite-side feed, the additional feed capacitance is much smaller and is treated as negligible in the notes.
The documented conclusion is that feed capacitance is less than 2 fF for the
tested cases and can be approximated as zero:
3.3.5.4. Total capacitance model¶
Using the extracted terms above, the MOM model notes recommend:
with C_feed chosen according to the feed geometry.
3.3.5.5. Series resistance notes¶
The notes also extract series-resistance behavior.
For single-sided feed, two solvers were compared and both gave an approximately
linear dependence on length / width, but with noticeably different fitted
coefficients.
The notes explicitly mark this difference as still requiring investigation, so these single-side resistance fits should be treated as model-development data rather than final compact-model equations.
For two-sided feed, the notes report linear fits of the form:
with extracted coefficients:
3-layer MOM:
a = 0.10 ohm,b = 0.31 ohm4-layer MOM:
a = 0.14 ohm,b = 0.27 ohm5-layer MOM:
a = 0.15 ohm,b = 0.26 ohm
The same notes also discuss SRF and inductive behavior for the single-sided configuration.
3.3.5.6. Status in this documentation¶
This subsection documents the extracted model-development results for the interleaved MOM capacitor. It should be read as characterization guidance for a MOM device family, not yet as a direct replacement for the existing capacitor symbols already delivered through the current schematic libraries.
3.3.6. Capacitor Simulator Library Mapping¶
3.3.6.1. Capacitors in ngspice¶
corner selector:
cornerCAP.libfamily model files:
capacitors_mod.libandcapacitors_stat.lib
3.3.6.2. Capacitors in Xyce¶
corner selector:
cornerCAP.libfamily model files:
capacitors_mod.libandcapacitors_stat.lib
3.3.6.3. Capacitors in Gnucap¶
The Gnucap tree includes capacitor model sources such as cornerCAP.va,
capacitor_paramset.va, and capacitor.va.
3.3.7. Capacitor Examples¶
The Xschem test library already includes AC, transient, S-parameter, and Monte Carlo examples for MIM and parasitic capacitor usage.