Process Specifications

IHP Open Source PDK

130nm BiCMOS Technology

IHP-SG13G2

Process Specifications

Rev. 1.2

Contents

• 1. General Information
  • 1.1. Main Processing Sequence and Cross-Section Schematic
  • 1.2. Process Control
    • 1.2.1. Pass/Fail Parameters
    • 1.2.2. Information Parameters
  • 1.3. Wafer Reject Criteria
• 2. Process Control Parameters
  • 2.1. NMOS-Specs
  • 2.2. PMOS-Specs
  • 2.3. iNMOS-Specs
  • 2.4. HV-NMOS-Specs
  • 2.5. HV-PMOS-Specs
  • 2.6. HV-iNMOS-Specs
  • 2.7. Rsil-Specs
  • 2.8. Rppd-Specs
  • 2.9. Rhigh-Specs
  • 2.10. Schottky_nbl1-Specs
  • 2.11. S-Varicap-Specs
  • 2.12. MIM Capacitor-Specs
  • 2.13. Resistances, Line Width Deltas, Temperature Coefficients
  • 2.14. Contact & Via Resistances
  • 2.15. Maximum Current Densities
  • 2.16. Layer Thickness Values
  • 2.17. Parasitic Capacitances
• 3. Bipolar Parameters
  • 3.1. npn13g2-Specs
  • 3.2. npn13g2l-Specs
  • 3.3. npn13g2v-Specs
• 4. Attachment A: Measurement Conditions
• 5. Change History
• 6. Known Issues